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THERMAL DEGENERATION OF MO AND PT SILICON SCHOTTKY DIODES

Author
CALLEJA E; GARRIDO J; PIQUERAS J; MARTINEZ A
UNIV. AUTONOMA MADRID CANTOBLANCO, FAC. CI., INST. FIS. ESTADO SOLIDO/MADRID/ESP
Source
SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 591-598; BIBL. 22 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE DIODE BARRIERE SCHOTTKY EFFET TUNNEL RESONNANT STABILITE THERMIQUE SILICIUM MOLYBDENE PLATINE ELECTRONIQUE
Keyword (en)
DIODE SCHOTTKY BARRIER DIODE RESONANT TUNNEL EFFECT THERMAL STABILITY SILICON MOLYBDENUM PLATINUM ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130041284

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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