ELECTRICAL CONDUCTIVITY OF METALLIC SELENIUM, TELLURIUM, AND SILICON UNDER HIGH PRESSURE
- Author
- DUNN KJ; BUNDY FP
GENERAL ELECTRIC CO./SCHENECTADY NY 12301/USA - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3246-3249; BIBL. 21 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONDUCTIVITE ELECTRIQUE HAUTE PRESSION TRANSITION ELECTRONIQUE TRANSITION METAL SEMICONDUCTEUR CRISTAL ETAT AMORPHE SELENIUM TELLURE SILICIUM SELENIUM METALLIQUE TELLURE METALLIQUE SILICIUM METALLIQUE PHYSIQUE SOLIDE
- Keyword (en)
- ELECTRICAL CONDUCTIVITY HIGH PRESSURE ELECTRONIC TRANSITION SEMICONDUCTOR METAL TRANSITION CRYSTALS AMORPHOUS STATE SELENIUM TELLURIUM SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130043879
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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