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PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA: APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS

Author
KRAUT EA; GRANT RW; WALDROP JR; KOWALCZYK SP
ROCKWELL INTERNATIONAL ELECTRON. RES. CENT./THOUSAND OAKS CA 913630/USA
Source
PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 24; PP. 1620-1623; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
POTENTIEL INTERFACE EMISSION PHOTOELECTRONIQUE RAYON X SEMICONDUCTEUR BANDE VALENCE STRUCTURE BANDE GALLIUM ARSENIURE PHYSIQUE SOLIDE
Keyword (en)
INTERFACE POTENTIAL PHOTOELECTRON EMISSION X-RAYS SEMICONDUCTOR MATERIALS VALENCE BAND BAND STRUCTURE SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130046332

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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