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ELECTRICAL DEFECTS IN SILICON INTRODUCED BY SPUTTERING AND SPUTTER-ETCHING

Author
GRUSELL E; BERG S; ANDERSSON LP
UNIV. UPPSALA, INST. TECHNOL./UPPSALA/SWE
Source
J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 7; PP. 1573-1576; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
CARACTERISTIQUE COURANT TENSION BARRIERE SCHOTTKY CONDUCTIVITE ELECTRIQUE PULVERISATION CATHODIQUE IMPURETE SILICIUM PHYSIQUE SOLIDE
Keyword (en)
VOLTAGE CURRENT CURVE SCHOTTKY BARRIER ELECTRICAL CONDUCTIVITY CATHODIC SPUTTERING IMPURITIES SILICON SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130051451

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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