GAP STATES IN HYDROGENATED AMORPHOUS SILICON: A COMPARISON OF PHOTOEMISSION AND PHOTOCONDUCTIVITY RESULTS
- Author
- VON ROEDERN B; MODDEL G
HARVARD UNIV., DIVISION APPLIED SCI./CAMBRIDGE MA 02138/USA - Source
- SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 6; PP. 467-471; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ETAT AMORPHE COUCHE MINCE EMISSION PHOTOELECTRONIQUE RAYON X DOPAGE PHOTOCONDUCTIVITE BANDE INTERDITE DENSITE ETAT ETAT LOCALISE SILICIUM IMPURETE HYDROGENE PHYSIQUE SOLIDE
- Keyword (en)
- AMORPHOUS STATE THIN FILM PHOTOELECTRON EMISSION X-RAYS DOPING PHOTOCONDUCTIVITY ENERGY GAP DENSITY OF STATES LOCALIZED STATE SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130053676
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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