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GAP STATES IN HYDROGENATED AMORPHOUS SILICON: A COMPARISON OF PHOTOEMISSION AND PHOTOCONDUCTIVITY RESULTS

Author
VON ROEDERN B; MODDEL G
HARVARD UNIV., DIVISION APPLIED SCI./CAMBRIDGE MA 02138/USA
Source
SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 6; PP. 467-471; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
ETAT AMORPHE COUCHE MINCE EMISSION PHOTOELECTRONIQUE RAYON X DOPAGE PHOTOCONDUCTIVITE BANDE INTERDITE DENSITE ETAT ETAT LOCALISE SILICIUM IMPURETE HYDROGENE PHYSIQUE SOLIDE
Keyword (en)
AMORPHOUS STATE THIN FILM PHOTOELECTRON EMISSION X-RAYS DOPING PHOTOCONDUCTIVITY ENERGY GAP DENSITY OF STATES LOCALIZED STATE SILICON SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130053676

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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