INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY DEPENDENCE OF HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIER DIODES
- Autor
- VIKTOROVITCH P; MODDEL G
HARVARD UNIV., GORDON MCKAY LAB./CAMBRIDGE MA 02138/USA - Fuente
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 9; PP. 4847-4854; BIBL. 23 REF.
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- DIODE DIODE BARRIERE SCHOTTKY ETAT AMORPHE HYDROGENATION FREQUENCE CAPACITE ELECTRIQUE CONDUCTANCE ELECTRIQUE SILICIUM ELECTRONIQUE
- Palabra clave (in)
- DIODE SCHOTTKY BARRIER DIODE AMORPHOUS STATE HYDROGENATION FREQUENCY CAPACITANCE ELECTRICAL CONDUCTANCE SILICON ELECTRONICS
- Palabra clave (es)
- ELECTRONICA
- Clasificación
- Disciplina
- Electronics
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- PASCAL8130061265
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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