ROLES OF THE LOWER AND THE UPPER HUBBARD BANDS AND THE DONOR-EXCITONIC STATES IN THE THEORY OF SHALLOW-IMPURITY STATES IN DOPED SEMICONDUCTORS
- Author
- CHAO KA; RIKLUND R; FERREIRA DA SILVA A
UNIV. LINKOEPING, DEP. PHYS. MEASUREMENT TECHNOL./LINKOEPING/SWE - Source
- PHYS. REV. B; USA; DA. 1980; VOL. 21; NO 12; PP. 5745-5748; BIBL. 15 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- THEORIE HARTREE FOCK SEMICONDUCTEUR MODELE ANDERSON MODELE HUBBARD DENSITE ETAT METHODE CALCUL IMPURETE PEU PROFONDE THEORIE STRUCTURE BANDE MODELE ANDERSON HUBBARD MOTT MODELE MHA ETAT EXCITONIQUE DONNEUR PHYSIQUE SOLIDE
- Keyword (en)
- HARTREE FOCK THEORY SEMICONDUCTOR MATERIALS ANDERSON MODEL HUBBARD MODEL DENSITY OF STATES CALCULATING METHOD SHALLOW IMPURITIES THEORY THEORETICAL STUDIES BAND STRUCTURE SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130098491
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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