ELECTRICAL CONDUCTION IN METAL/IMPLANTED SIO2/SI STRUCTURES
- Author
- RAGAIE HF
EFCIS/GRENOBLE 38/FRA - Source
- ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 14; PP. 565-566; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONDUCTION ELECTRIQUE STRUCTURE MOS DIELECTRIQUE OXYDE DOPAGE IMPLANTATION ION COMMUTATION MEMOIRE DEFAUT CRISTALLIN CAPACITE MOS CARACTERISTIQUE COURANT TENSION CONDUCTIVITE ELECTRIQUE ELECTRONIQUE PHYSIQUE SOLIDE
- Keyword (en)
- ELECTRICAL CONDUCTION MOS STRUCTURE DIELECTRIC MATERIALS OXIDES DOPING ION IMPLANTATION STORAGE SWITCHING CRYSTAL DEFECT DEFECTS MOS CAPACITY VOLTAGE CURRENT CURVE ELECTRICAL CONDUCTIVITY ELECTRONICS SOLID PHYSICS
- Keyword (es)
- ELECTRONICA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130129251
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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