ELECTRICAL MEASUREMENT OF FEATURE SIZES IN MOS SI2-GATE VLSI TECHNOLOGY
- Author
- TAKACS D; MUELLER W; SCHWABE V
SIEMENS AG/MUNICH/DEU - Source
- IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1368-1373; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TECHNOLOGIE MOS CIRCUIT VLSI TECHNOLOGIE GRILLE SILICIUM FABRICATION MICROELECTRONIQUE MESURE METHODE ELECTRIQUE DIMENSION CIRCUIT INTEGRE ELECTRONIQUE
- Keyword (en)
- MOS TECHNOLOGY VLSI CIRCUIT SILICON GATE TECHNOLOGY MICROELECTRONIC FABRICATION MEASUREMENT ELECTRICAL METHODS DIMENSIONS INTEGRATED CIRCUIT ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130135002
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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