A MODEL FOR THE SUBMICROMETER N-CHANNEL DEEP-DEPLETION SOS/MOSFET
- Author
- JERDONEK RT; BANDY WR; BIRNBAUM J
US DEP. DEFENSE/FORT MEADE MD/USA - Source
- IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1566-1570; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR MOS COUCHE APPAUVRISSEMENT CANAL TRANSISTOR CONDUCTIVITE TYPE N SIMULATION TECHNOLOGIE SILICIUM SUR SAPHIR ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR MOS TRANSISTOR DEPLETION LAYER TRANSISTOR CHANNEL N TYPE CONDUCTIVITY SIMULATION SILICON ON SAPPHIRE TECHNOLOGY ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130135013
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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