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FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION IMPLANTATION

Author
STONEHAM EB; PATTERSON GA; GLADSTONE JM
HEWLETT-PACKARD CO./SANTA ROSA CA 95404/USA
Source
J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 371-383; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
IMPLANTATION ION PORTEUR CHARGE CONCENTRATION PORTEUR CHARGE GALLIUM ARSENIURE PHYSIQUE SOLIDE
Keyword (en)
ION IMPLANTATION CHARGE CARRIER CHARGE CARRIER CONCENTRATION SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130140698

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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