A MODEL FOR THE LATERAL VARIATION OF AUTODOPING IN EPITAXIAL FILMS
- Author
- SRINIVASAN GR
IBM, DATA SYSTEMS DIVISION/HOPEWELL JUNCTION NY 12533/USA - Source
- IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 558-561; BIBL. 5 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- COUCHE MINCE COUCHE EPITAXIQUE DOPAGE DEPOT CHIMIQUE PHASE VAPEUR CIRCUIT VLSI COUCHE ENTERREE CIRCUIT INTEGRE DISTRIBUTION LATERALE ELECTRONIQUE
- Keyword (en)
- THIN FILM EPITAXIAL FILM DOPING CHEMICAL VAPOR DEPOSITION VLSI CIRCUIT BURIED LAYER INTEGRATED CIRCUIT LATERAL DISTRIBUTION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130191339
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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