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A DUAL-GATE DEEP-DEPLETION TECHNIQUE FOR GENERATION LIFETIME MEASUREMENT

Author
BARTH PW; ANGELL JB
STANFORD UNIV./STANFORD CA 94305/USA
Source
IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2252-2255; BIBL. 6 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR MOS TECHNOLOGIE ISOLATION DIELECTRIQUE PORTEUR CHARGE DUREE VIE MESURE ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR MOS TRANSISTOR CHARGE CARRIER LIFETIME MEASUREMENT ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130224454

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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