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DETERMINATION OF THE ELECTRODE CAPACITANCE MATRIX FOR GAAS FET'S

Author
ALEXOPOULOS NG; MAUPIN JA; GREILING PT
UNIV. CALIFORNIA, ELECTR. SCI. ENG. DEP./LOS ANGELES CA 90024/USA
Source
IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 5; PP. 459-466; BIBL. 17 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP ELECTRODE CAPACITE ELECTRIQUE MATRICE GALLIUM ARSENIURE ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR ELECTRODES CAPACITANCE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130230829

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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