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ELECTRICAL PROPERTIES OF CVD AL2O-GAAS MIS CAPACITORS

Author
TANAKA K; TAKAHASHI H; KUNIYOSHI S; OHKI H
CHIBA UNIV., DEP. ELECTR. ENG./CHIBA/JPN
Source
SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1093-1094; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE COMPOSEE STRUCTURE MIS CAPACITE MIS DEPOT CHIMIQUE PHASE VAPEUR PROPRIETE ELECTRIQUE COUCHE MINCE ALUMINIUM OXYDE ELECTRONIQUE
Keyword (en)
COMPOUNDED STRUCTURE MIS STRUCTURE MIS CAPACITY CHEMICAL VAPOR DEPOSITION ELECTRICAL PROPERTIES THIN FILM ALUMINIUM OXIDE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130245042

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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