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COMPARISON OF THAI'S THEORY WITH EXPERIMENTAL BORON DOPING PROFILES IN SILICON, DIFFUSED FROM BORON NITRIDE SOURCES

Author
FROHMADER KP; BAUMBAUER L
UNIV. ERLANGEN-NUERNBERG, LEHRSTUHL TECH. ELEKTRON./ERLANGEN 8520/DEU
Source
SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1263-1265; BIBL. 17 REF.
Document type
Article
Language
English
Keyword (fr)
PASTILLE SEMICONDUCTRICE PROFIL DOPAGE THEORIE ETUDE EXPERIMENTALE FABRICATION DOPAGE SILICIUM IMPURETE BORE ELECTRONIQUE
Keyword (en)
DOPING PROFILE THEORY THEORETICAL STUDIES EXPERIMENTAL STUDY DOPING SILICON ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130251526

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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