A NEW INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI SILICON CRYSTAL: A NEW DOUBLE PREANNEALING TECHNIQUE
- Author
- NAGASAWA K; MATSUSHITA Y; KISHINO S
VLSI TECHNOL. RES. ASSOCIATION/TAKATSUKU KAWASAKI 213/JPN - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 7; PP. 622-624; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NON METAL ELEMENT GROUPE IVB METHODE CZOCHRALSKI ANNIHILATION DEFAUT RECUIT TEMPERATURE ETUDE EXPERIMENTALE DEFAUT CRISTALLIN SILICIUM CRISTALLOGRAPHIE
- Keyword (en)
- NON METAL GROUP IVB ELEMENT CZOCHRALSKI METHOD DEFECT ANNIHILATION ANNEALING TEMPERATURE EXPERIMENTAL STUDY CRYSTAL DEFECT DEFECTS SILICON CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130267064
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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