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A TEST OF CONVERGENCE OF THE EXPANSION OF THE SCREENING CHARGE DENSITY FOR IMPURITY IONS IN SEMICONDUCTORS

Author
NOOR MOHAMMAD S
INDIAN INST. TECHNOL./KHARAGPUR 721302/IND
Source
PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 2; PP. 445-450; ABS. GER; BIBL. 15 REF.
Document type
Article
Language
English
Keyword (fr)
NIVEAU IMPURETE CHARGE ELECTRIQUE DENSITE CHARGE EFFET ECRAN SEMICONDUCTEUR THEORIE IMPURETE IONIQUE PHYSIQUE SOLIDE
Keyword (en)
IMPURITY LEVEL ELECTRICAL CHARGE CHARGE DENSITY SHIELDING EFFECT SEMICONDUCTOR MATERIALS THEORY THEORETICAL STUDIES SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130273355

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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