A TEST OF CONVERGENCE OF THE EXPANSION OF THE SCREENING CHARGE DENSITY FOR IMPURITY IONS IN SEMICONDUCTORS
- Author
- NOOR MOHAMMAD S
INDIAN INST. TECHNOL./KHARAGPUR 721302/IND - Source
- PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 2; PP. 445-450; ABS. GER; BIBL. 15 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NIVEAU IMPURETE CHARGE ELECTRIQUE DENSITE CHARGE EFFET ECRAN SEMICONDUCTEUR THEORIE IMPURETE IONIQUE PHYSIQUE SOLIDE
- Keyword (en)
- IMPURITY LEVEL ELECTRICAL CHARGE CHARGE DENSITY SHIELDING EFFECT SEMICONDUCTOR MATERIALS THEORY THEORETICAL STUDIES SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130273355
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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