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ELECTRICAL AND OPTICAL PROPERTIES OF CHALCOGENIDE AMORPHOUS SEMICONDUCTORS MODIFIED WITH NI

Author
GOMI T; HIROSE Y; KUROSU T; SHIRAISHI T; IIDA M; GEKKA Y; KUNIOKA A
TOKAI UNIV., FAC. ENG., DEP. COMMUNIC./HIRATSUKA KANAGAWA 259-12/JPN
Source
J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1980; VOL. 41; NO 1; PP. 37-46; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
ETAT AMORPHE SEMICONDUCTEUR METAL TRANSITION COMPOSE COMPOSITION CHIMIQUE CONDUCTIVITE ELECTRIQUE STRUCTURE BANDE BANDE INTERDITE ABSORPTION OPTIQUE DENSITE ETAT NIVEAU FERMI NICKEL ARSENIC GERMANIUM SELENIUM TELLURE PHYSIQUE SOLIDE
Keyword (en)
AMORPHOUS STATE SEMICONDUCTOR MATERIALS CHEMICAL COMPOSITION ELECTRICAL CONDUCTIVITY BAND STRUCTURE ENERGY GAP OPTICAL ABSORPTION DENSITY OF STATES FERMI LEVEL SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130328665

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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