CARACTERISATION ELECTRIQUE ET STRUCTURALE DE GAAS APRES IMPLANTATION IONIQUE ET RECUIT
- Author
- MARTIN GM; MAKRAM EBEID S;
DGRST/PARIS/FRA/(PATR.) LABORATOIRES D'ELECTRONIQUE ET DE PHYSIQUE APPLIQUEE/LIMEIL-BREVANNES/FRA - Source
- FRA; DA. 1980; DGRST/78 7 2157; 35 P.; 30 CM; BIBL. 11 REF.; ACTION CONCERTEE: PHYSIQUE ELECTRONIQUE
- Document type
- Report
- Language
- English; French
- Keyword (fr)
- MOBILITE PORTEUR CHARGE FAISCEAU LASER RECUIT CONTACT OHMIQUE COMPOSE MINERAL METAL GROUPE IIIB COMPOSE AMORPHISATION RECRISTALLISATION ANALYSE DIFFUSION ION ANALYSE DIFFUSION RUTHERFORD IMPLANTATION ION GALLIUM ARSENIURE IMPURETE SELENIUM IMPURETE TELLURE PHYSIQUE SOLIDE CRISTALLOGRAPHIE
- Keyword (en)
- CHARGE CARRIER MOBILITY LASER BEAM ANNEALING OHMIC CONTACT INORGANIC COMPOUND AMORPHIZATION RECRYSTALLIZATION ION IMPLANTATION SOLID PHYSICS CRISTALLOGRAPHY
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130329111
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Istex access
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