PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICON
- Author
- SHIMURA F; TSUYA H; KAWAMURA T
NEC-TOSHIBA INFORMATION SYSTEMS INC./TAKATSU-KU KAWASAKI/JPN - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 5; PP. 483-486; BIBL. 12 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NON METAL ELEMENT GROUPE IVB DISTRIBUTION IMPURETE METHODE CZOCHRALSKI PRECIPITATION ANALYSE MET SPECTROMETRIE IR SPECTROMETRIE ABSORPTION GERMINATION HETEROGENE TRAITEMENT THERMIQUE IMPURETE SILICIUM IMPURETE OXYGENE CRISTALLOGRAPHIE
- Keyword (en)
- NON METAL GROUP IVB ELEMENT IMPURITY DISTRIBUTION CZOCHRALSKI METHOD PRECIPITATION INFRARED SPECTROMETRY INFRARED SPECTROSCOPY ABSORPTION SPECTROMETRY ABSORPTION SPECTROSCOPY HETEROGENEOUS NUCLEATION HEAT TREATMENT IMPURITIES SILICON CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130358905
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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