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PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICON

Author
SHIMURA F; TSUYA H; KAWAMURA T
NEC-TOSHIBA INFORMATION SYSTEMS INC./TAKATSU-KU KAWASAKI/JPN
Source
APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 5; PP. 483-486; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
NON METAL ELEMENT GROUPE IVB DISTRIBUTION IMPURETE METHODE CZOCHRALSKI PRECIPITATION ANALYSE MET SPECTROMETRIE IR SPECTROMETRIE ABSORPTION GERMINATION HETEROGENE TRAITEMENT THERMIQUE IMPURETE SILICIUM IMPURETE OXYGENE CRISTALLOGRAPHIE
Keyword (en)
NON METAL GROUP IVB ELEMENT IMPURITY DISTRIBUTION CZOCHRALSKI METHOD PRECIPITATION INFRARED SPECTROMETRY INFRARED SPECTROSCOPY ABSORPTION SPECTROMETRY ABSORPTION SPECTROSCOPY HETEROGENEOUS NUCLEATION HEAT TREATMENT IMPURITIES SILICON CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130358905

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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