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ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE STUDIES OF GE-IMPLANTED GAAS

Author
CHAN SS; MARCYK GT; STREETMAN BG
UNIV. ILLINOIS URBANA-CHAMPAIGN, COORDINATE SCI. LAB./URBANA IL 61801/USA
Source
J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 1; PP. 213-238; BIBL. 22 REF.
Document type
Article
Language
English
Keyword (fr)
CONDUCTIVITE ELECTRIQUE EFFET HALL CONCENTRATION PORTEUR CHARGE MOBILITE PORTEUR CHARGE PHOTOLUMINESCENCE LASER IMPLANTATION ION RECUIT DIODE PLANAIRE JONCTION GALLIUM ARSENIURE IMPURETE GERMANIUM PHYSIQUE SOLIDE
Keyword (en)
ELECTRICAL CONDUCTIVITY HALL EFFECT CHARGE CARRIER CONCENTRATION CHARGE CARRIER MOBILITY PHOTOLUMINESCENCE LASER ION IMPLANTATION ANNEALING PLANAR DIODE JUNCTION SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130360955

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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