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DUAL-GATE MOS TRANSISTORS: PHYSICAL MODELS

Author
BARSAN RM
RD CENT. SEMICONDUCTORS/BUCHAREST 72996/ROM
Source
REV. ROUM. PHYS.; ISSN 0035-4090; ROM; DA. 1980; VOL. 25; NO 10; PP. 1125-1136; ABS. FRE; BIBL. 19 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR MOS SIMULATION PHYSIQUE THEORIE GRILLE DOUBLE ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR MOS TRANSISTOR PHYSICAL SIMULATION THEORY THEORETICAL STUDIES ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130391418

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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