DETERMINATION OF THE ENERGY LEVELS IN NEUTRON IRRADIATED P-TYPE SILICON
- Author
- GHITA I; GRECU VV; MESTER A; PENESCU M; VIISOREANU G
I.P.R.S./BANEASA/ROM - Source
- REV. ROUM. PHYS.; ISSN 0035-4090; ROM; DA. 1981; VOL. 26; NO 1; PP. 75-82; ABS. FRE; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NIVEAU IMPURETE BANDE INTERDITE CENTRE DONNEUR CENTRE ACCEPTEUR CONDUCTIVITE ELECTRIQUE IRRADIATION NEUTRON NIVEAU DEFAUT CRISTALLIN SILICIUM IMPURETE BORE PHYSIQUE SOLIDE
- Keyword (en)
- IMPURITY LEVEL ENERGY GAP DONOR CENTER ACCEPTOR CENTER ELECTRICAL CONDUCTIVITY IRRADIATION NEUTRONS CRYSTAL DEFECT LEVEL SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130405162
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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