Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=PASCAL8130421250

Export

Selection :

DETERMINATION OF THE DRIFT MOBILITY IN HIGH-CONDUCTIVITY AMORPHOUS SILICON

Author
CRANDALL RS
RCA LABORATORIES/PRINCETON NJ 08540/USA
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1387-1391; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE DIODE BARRIERE SCHOTTKY ETAT AMORPHE MOBILITE PORTEUR CHARGE COURANT ELECTRIQUE REGIME TRANSITOIRE TENSION POLARISATION TENSION INVERSE PORTEUR CHARGE APPLICATION SILICIUM ELECTRONIQUE PHYSIQUE SOLIDE
Keyword (en)
DIODE SCHOTTKY BARRIER DIODE AMORPHOUS STATE CHARGE CARRIER MOBILITY ELECTRICAL CURRENTS UNSTEADY FLOW BIAS VOLTAGE INVERSE VOLTAGE CHARGE CARRIER APPLICATION SILICON ELECTRONICS SOLID PHYSICS
Keyword (es)
ELECTRONICA FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130421250

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web