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CARACTERISATION ELECTRIQUE DES COUCHES D'ASGA:GE EPITAXIEES PAR LA TECHNIQUE DES JETS MOLECULAIRES

Author
BACEIREDO SERVANDO
Source
FRA; DA. 1981; 147 P.; 30 CM; BIBL. 68 REF.; TH. 3E CYCLE: E.E.A., MAT. COMPOS. ACTIFS/TOULOUSE 3/1981/2479
Document type
Thesis
Language
French
Keyword (fr)
COMPOSE MINERAL METAL GROUPE IIIB COMPOSE CONDENSATION FAISCEAU MOLECULAIRE ETUDE EXPERIMENTALE CONDUCTIVITE ELECTRIQUE EFFET HALL MOBILITE PORTEUR CHARGE CONCENTRATION PORTEUR CHARGE DIFFRACTION ELECTRON NIVEAU IMPURETE COUCHE EPITAXIQUE CROISSANCE CRISTALLINE IMPURETE GALLIUM ARSENIURE NIVEAU PROFOND IMPURETE GERMANIUM CRISTALLOGRAPHIE PHYSIQUE SOLIDE
Keyword (en)
INORGANIC COMPOUND MOLECULAR BEAM CONDENSATION EXPERIMENTAL STUDY ELECTRICAL CONDUCTIVITY HALL EFFECT CHARGE CARRIER MOBILITY CHARGE CARRIER CONCENTRATION ELECTRON DIFFRACTION ANALYSIS IMPURITY LEVEL EPITAXIAL FILM CRYSTAL GROWTH IMPURITIES DEEP LEVEL CRISTALLOGRAPHY SOLID PHYSICS
Keyword (es)
CRISTALOGRAFIA FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130430582

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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