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INFLUENCE DE LA COMPENSATION SUR LA CONDUCTIVITE D'IMPURETE DE GE N DANS LE CAS DE DOPAGE INTERMEDIAIRE

Author
GERSHENZON EM; LITVAK GORSKAYA LB; LUGOVAYA G YA
MOSKOVSKIJ GOS. PEDAGOG. INST. IM. V.I. LENINA/SUN
Source
FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1284-1292; BIBL. 18 REF.
Document type
Article
Language
Russian
Keyword (fr)
CONDUCTIVITE ELECTRIQUE CONDUCTIVITE SAUT CONDUCTIVITE IMPURETE CENTRE ACCEPTEUR SEMICONDUCTEUR COMPENSE MOBILITE HALL MODELE ANDERSON TEMPERATURE BASSE TEMPERATURE TRES BASSE TEMPERATURE GERMANIUM IMPURETE ANTIMOINE IMPURETE INDIUM PHYSIQUE SOLIDE
Keyword (en)
ELECTRICAL CONDUCTIVITY HOPPING CONDUCTIVITY IMPURITY CONDUCTIVITY ACCEPTOR CENTER COMPENSATED SEMICONDUCTOR HALL MOBILITY ANDERSON MODEL TEMPERATURE LOW TEMPERATURE VERY LOW TEMPERATURE GERMANIUM SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130459876

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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