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FORMATION OF B2-CENTRES DURING ION IRRADIATION OF SIOX LAYERS

Author
GERASIMENKO NN; TSEITLIN GM; VASILEV SV
ACAD. SCI. USSR, SIBERIAN BRANCH, INST. SEMICONDUCTOR PHYS./NOVOSIBIRSK 630090/SUN
Source
PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. K169-K174; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
COMPOSE MINERAL ELEMENT GROUPE IVB COMPOSE ETAT AMORPHE FORMATION SPECTROMETRIE UV DEFAUT IRRADIATION IRRADIATION ION SILICIUM OXYDE HELIUM . ION ATOMIQUE BORE . ION ATOMIQUE PHOSPHORE . ION ATOMIQUE CRISTALLOGRAPHIE
Keyword (en)
INORGANIC COMPOUND AMORPHOUS STATE ULTRAVIOLET SPECTROMETRY ULTRAVIOLET SPECTROSCOPY IRRADIATION DEFECT ION IRRADIATION SILICA CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130473454

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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