AN ELLIPSOMETRIC STUDY OF SIO2/SI3N4 DOUBLE LAYERS ON SILICON PRODUCED BY CHEMICAL VAPOUR DEPOSITION
- Author
- DINGES HW
DEUTSCHEN BUNDESPOST FTZ/DARMSTADT 6100/DEU - Source
- THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 4; PP. L63-L66; BIBL. 7 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DEPOT CHIMIQUE PHASE VAPEUR ELLIPSOMETRIE COUCHE INTERMEDIAIRE ELEMENT GROUPE IVB COMPOSE COMPOSE MINERAL SUPPORT EPAISSEUR INDICE REFRACTION ETUDE EXPERIMENTALE COUCHE MULTIPLE COUCHE MINCE INTERFACE SOLIDE SOLIDE CROISSANCE CRISTALLINE SILICIUM NITRURE SILICIUM IV OXYDE SYSTEME SI3N4 SIO2 SI SUPPORT SI CRISTALLOGRAPHIE
- Keyword (en)
- CHEMICAL VAPOR DEPOSITION ELLIPSOMETRY INORGANIC COMPOUND THICKNESS REFRACTIVE INDEX EXPERIMENTAL STUDY MULTIPLE LAYER THIN FILM SOLID SOLID INTERFACE CRYSTAL GROWTH SILICON NITRIDE CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130508597
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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