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DETERMINATION OF THE CHANNEL TEMPERATURE IN A GAAS MESFET FROM THE EMISSION TRANSIENTS OF DEEP TRAPS

Author
PINSARD JL; WALLIS RH; ZYLBERSZTEJN A
THOMPSON-CSF/ORSAY 91401/FRA
Source
SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 551-555; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY CANAL TRANSISTOR TEMPERATURE PIEGEAGE PORTEUR CHARGE TRANSITOIRE ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR TRANSISTOR CHANNEL TEMPERATURE CHARGE CARRIER TRAPPING TRANSITORY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130512455

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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