OCTAHEDRAL PRECIPITATES IN HIGH TEMPERATURE ANNEALED CZOCHRALSKI-GROWN SILICON
- Author
- SHIMURA F
NIPPON ELECTRIC CO. LTD./KAWASAKI/JPN - Source
- J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 3; PP. 588-591; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NON METAL MONOCRISTAL METHODE CZOCHRALSKI RECUIT ETUDE EXPERIMENTALE MICROSCOPIE ELECTRONIQUE TRANSMISSION HAUTE TEMPERATURE SPECTROMETRIE IR CROISSANCE CRISTALLINE SILICIUM CRISTALLOGRAPHIE
- Keyword (en)
- NON METAL SINGLE CRYSTAL CZOCHRALSKI METHOD ANNEALING EXPERIMENTAL STUDY TRANSMISSION ELECTRON MICROSCOPY HIGH TEMPERATURE INFRARED SPECTROMETRY CRYSTAL GROWTH SILICON CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0033149
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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