ETUDE EXPERIMENTALE ET MODELISATION ELECTRIQUE DES STRUCTURES MIS N-INP PREPAREES PAR OXYDATION EN MILIEU ACIDE
- Author
- MICHEL C; NGUYEN DH; RAVELET S; LINH NT
I.S.I.N./NANCY-VANDOEUVRE 54500/FRA - Source
- J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 7; PP. 1331-1342; ABS. ENG; BIBL. 25 REF.
- Document type
- Article
- Language
- French
- Keyword (fr)
- STRUCTURE MIS INDIUM PHOSPHURE CARACTERISTIQUE COURANT TENSION FABRICATION OXYDATION OR EMISSION PHOTOELECTRONIQUE CARACTERISTIQUE CAPACITE TENSION BARRIERE SCHOTTKY ELECTRONIQUE
- Keyword (en)
- INDIUM PHOSPHIDES VOLT AMPERE CHARACTERISTIC MANUFACTURING OXIDATION GOLD PHOTOELECTRON EMISSION SCHOTTKY BARRIER ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0050989
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Istex access
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