GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON
- Author
- NAKASHITA T; HIROSE M; OSAKA Y
HIROSHIMA UNIV., FAC. ENG., DEP. ELECTR. ENG./HIROSHIMA 730/JPN - Source
- JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 3; PP. 471-475; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ETAT AMORPHE DENSITE ETAT BANDE INTERDITE STRUCTURE ELECTRONIQUE RESONANCE PARAMAGNETIQUE ELECTRONIQUE SILICIUM IMPURETE BORE PHYSIQUE SOLIDE
- Keyword (en)
- AMORPHOUS STATE DENSITY OF STATES ELECTRONIC STRUCTURE ELECTRON PARAMAGNETIC RESONANCE SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0058428
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1981\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"NAKASHITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";a:2:{i:0;s:8:\"HIROSE M\";i:1;s:7:\"OSAKA Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1981\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"NAKASHITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";a:2:{i:0;s:8:\"HIROSE M\";i:1;s:7:\"OSAKA Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1981\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"NAKASHITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";a:2:{i:0;s:8:\"HIROSE M\";i:1;s:7:\"OSAKA Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1981\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"NAKASHITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";a:2:{i:0;s:8:\"HIROSE M\";i:1;s:7:\"OSAKA Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1981\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"NAKASHITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";a:2:{i:0;s:8:\"HIROSE M\";i:1;s:7:\"OSAKA Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:55:\"GAP STATES AND ESR OF BORON-DOPED CVD AMORPHOUS SILICON\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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