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AL048IN052AS/GA047IN053AS/AL048IN052 AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65 MU M

Author
TSANG WT
BELL LABORATORIES/MURRAY HILL NJ 07994/USA
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3861-3864; BIBL. 16 REF.
Document type
Article
Language
English
Keyword (fr)
LASER SEMICONDUCTEUR HETEROJONCTION DOUBLE ALUMINIUM INDIUM ARSENIURE MIXTE LASER IR GALLIUM INDIUM ARSENIURE MIXTE CROISSANCE CRISTALLINE EPITAXIE FAISCEAU MOLECULAIRE OPTIQUE
Keyword (en)
ALUMINIUM INDIUM ARSENIDES MIXED GALLIUM INDIUM ARSENIDES MIXED CRYSTAL GROWTH EPITAXY MOLECULAR BEAM OPTICS
Keyword (es)
OPTICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics

Discipline
Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0065489

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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