ROOM TEMPERATURE CW OPERATION OF GAINASP/INP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.23 MU M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOUR DEPOSITION
- Author
- RAZEGHI M; HIRTZ JP; HIRTZ P; LARIVAIN JP; BONDEAU R; DE CREMOUX R; DUCHEMIN JP
THOMSON-CSF/ORSAY 91401/FRA - Source
- ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 17; PP. 597-598; BIBL. 4 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- LASER SEMICONDUCTEUR HETEROJONCTION DOUBLE LASER CONTINU TEMPERATURE AMBIANTE INDIUM PHOSPHURE GALLIUM INDIUM PHOSPHOARSENIURE MIXTE LASER IR DEPOT CHIMIQUE OPTIQUE
- Keyword (en)
- ROOM TEMPERATURE INDIUM PHOSPHIDES GALLIUM INDIUM ARSENIDES PHOSPHIDES MIXED OPTICS
- Keyword (es)
- OPTICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0076347
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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