THE INFLUENCE OF MOBILE IONS ON THE SI/SIO2 INTERFACE TRAPS
- Author
- HILLEN MW; HEMMES DG
GRONINGEN STATE UNIV., DEP. APPLIED PHYS./GRONINGEN AG/NLD - Source
- SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 773-780; BIBL. 23 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT ISOLANT SEMICONDUCTEUR SILICIUM SILICIUM OXYDE PIEGEAGE PORTEUR CHARGE INTERFACE ION MOBILE ELECTRONIQUE
- Keyword (en)
- SILICON SILICON OXIDES INTERFACE ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0076415
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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