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A NEW COMPLEMENTARY DIELECTRIC ISOLATION PROCESS FOR HIGH-VOLTAGE DEVICES

Other title
NOUVEAU PROCEDE D'ISOLEMENT DIELECTRIQUE COMPLEMENTAIRE POUR COMPOSANTS A HAUTE TENSION (fr)
Author
SAKURAI T; KATO K
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP./MUSASHINO-SHI TOKYO/JPN
Source
IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1199-1201; BIBL. 5 REF.
Document type
Article
Language
English
Keyword (fr)
CIRCUIT INTEGRE CIRCUIT VLSI DIODE JONCTION P+ N JONCTION N+ P FABRICATION MICROELECTRONIQUE TECHNOLOGIE ISOLATION HAUTE TENSION DIELECTRIQUE SILICIUM ELECTRONIQUE
Keyword (en)
INTEGRATED CIRCUIT DIODE N+ P JONCTION HIGH VOLTAGE DIELECTRIC MATERIALS SILICON ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0106503

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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