PHOTOELECTRICAL MEMORY EFFECT IN ZNIN2SE4
- Author
- FILIPOWICZ J; ROMEO N; TARRICONE L
WARSAW TECH. UNIV., INST. PHYS./WARSAW/POL - Source
- SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 7; PP. 619-623; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- METAL TRANSITION COMPOSE MONOCRISTAL CARACTERISTIQUE COURANT TENSION CONDUCTIVITE ELECTRIQUE PHOTOCONDUCTIVITE TEMPERATURE ENERGIE ACTIVATION EFFET MEMOIRE CONDUCTIVITE NEGATIVE INDIUM ZINC SELENIURE MIXTE PHYSIQUE SOLIDE
- Keyword (en)
- TRANSITION METAL COMPOUNDS SINGLE CRYSTAL VOLT AMPERE CHARACTERISTIC ELECTRICAL CONDUCTIVITY PHOTOCONDUCTIVITY TEMPERATURE ACTIVATION ENERGY MEMORY EFFECT SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0131337
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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