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COMPARISON OF GAAS DEVICE APPROACHES FOR ULTRAHIGH-SPEED VLSI

Author
EDEN RC
ROCKWELL INTERNATIONAL/CULVER CITY CA/USA
Source
PROC. IEEE; ISSN 0018-9219; USA; DA. 1982; VOL. 70; NO 1; PP. 5-12; BIBL. 16 REF.
Document type
Article
Language
English
Keyword (fr)
ARTICLE SYNTHESE CIRCUIT INTEGRE CIRCUIT VLSI TRANSISTOR TRANSISTOR HETEROJONCTION TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY MODE APPAUVRISSEMENT PUISSANCE FAIBLE GALLIUM ARSENIURE CIRCUIT ULTRARAPIDE ELECTRONIQUE
Keyword (en)
REVIEW INTEGRATED CIRCUIT TRANSISTOR LOW POWER GALLIUM ARSENIDES ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0159258

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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