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EFFECT OF ABSORBED WATER ON AN INDIUM OXIDE-INSULATOR (BEOSIO2)-P-SILICON SOLAR CELL

Author
KO K; NAKAZAWA T
SHINSHU UNIV., FAC. ENG., DEP. ELECTRON./NAGANO 380/JPN
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1110-1114; BIBL. 30 REF.
Document type
Article
Language
English
Keyword (fr)
ENERGIE SOLAIRE EQUIPEMENT CELLULE SOLAIRE RENDEMENT VAPEUR EAU ABSORPTION ETUDE EXPERIMENTALE JAPON DISPOSITIF PHOTOELECTRIQUE HETEROJONCTION INDIUM OXYDE SILICIUM INFLUENCE ENERGIE ELECTRONIQUE
Keyword (en)
SOLAR ENERGY EQUIPMENT SOLAR CELL YIELD STEAM ABSORPTION EXPERIMENTAL STUDY JAPAN PHOTOELECTRIC CELL HETEROJUNCTION INDIUM OXIDES SILICON ENERGY ELECTRONICS
Keyword (es)
ENERGIA ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy

Discipline
Electronics Energy
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0173633

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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