ELECTRICAL DAMAGE IN MOS DEVICES BY RF DIODE SPUTTERED ALUMINIUM METALLIZATION
- Author
- SERIKAWA T; YACHI T
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP./MUSASHINO-SHI TOKYO/JPN - Source
- IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 882-885; BIBL. 14 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR MOS CAPACITE MOS METALLISATION CONNEXION ELECTRIQUE FABRICATION MICROELECTRONIQUE PULVERISATION HAUTE FREQUENCE DETERIORATION TECHNOLOGIE GRILLE SILICIUM CARACTERISTIQUE CAPACITE TENSION ALUMINIUM SILICIUM ELECTRONIQUE
- Keyword (en)
- METALLIZATION ELECTRICAL CONNECTION RADIOFREQUENCY SPUTTERING DETERIORATION ALUMINIUM SILICON ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0180751
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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