ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIER
- Author
- BARTUR M; NICOLET MA
CALIFORNIA INST. TECHNOL./PASADENA CA 91125/USA - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 822-824; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE DIODE DIODE BARRIERE SCHOTTKY COUCHE MINCE CARACTERISTIQUE ELECTRIQUE CARACTERISTIQUE COURANT TENSION ALUMINIUM NICKEL SILICIURE TUNGSTENE BARRIERE TUNGSTENE ELECTRONIQUE
- Keyword (en)
- DIODE THIN FILM ELECTRICAL CHARACTERISTIC VOLT AMPERE CHARACTERISTIC ALUMINIUM NICKEL SILICIDES TUNGSTEN ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0210219
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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