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A MODEL FOR THE ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS SILICON

Author
OVERHOF H; BEYER W
TECH. UNIV. BERLIN, INST. THEORET. PHYS./BERLIN 1000/DEU
Source
PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 43; NO 3; PART. 2; PP. 433-450; BIBL. 25 REF.
Document type
Article
Language
English
Keyword (fr)
ETAT AMORPHE DENSITE ETAT CONDUCTIVITE ELECTRIQUE POUVOIR THERMOELECTRIQUE HYDROGENATION SILICIUM IMPURETE HYDROGENE PHYSIQUE SOLIDE
Keyword (en)
AMORPHOUS STATE DENSITY OF STATES ELECTRICAL CONDUCTIVITY THERMOELECTRIC POWER DENSITY OF STATES HYDROGENATION SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0211755

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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