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A NOVEL 14 V PROGRAMMABLE 4 KBIT MOS PROM USING A POLY-SI RESISTOR APPLICABLE TO ON-CHIP PROGRAMMABLE DEVICES

Author
TANIMOTO M; MUROTA J; WADA M; WATANABE T; MIURA K; IEDA N
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP./TOKYO 180/JPN
Source
IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 1; PP. 62-68; BIBL. 18 REF.
Document type
Article
Language
English
Keyword (fr)
FABRICATION MICROELECTRONIQUE TECHNOLOGIE MOS MEMOIRE PROM MEMOIRE MOS CONCEPTION ANALYSE FONCTIONNEMENT POLYCRISTAL RESISTANCE ELECTRIQUE SILICIUM ELECTRONIQUE
Keyword (en)
TECHNOLOGY MEMORY DESIGN POLYCRYSTAL RESISTOR SILICON ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0216773

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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