MEASUREMENT OF ELECTRICAL RESISTIVITY OF CVD-BN PASSIVATION FILM FROM GATE CHARGE DECAY TIME OF A MOS TRANSISTOR
- Author
- CHOL KIM; SHONO K
SOPHIA UNIV., FAC. SCI. TECHNOL., DEP. ELECTR. ELECTRON. ENG./CHIYODA-KU TOKYO 102/JPN - Source
- JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 10; PP. 1901-1905; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR MOS CONDUCTIVITE TYPE P PREPARATION DEPOT METHODE PHASE VAPEUR DEPOT CHIMIQUE PHASE VAPEUR COURANT FUITE RESISTIVITE ELECTRIQUE CIRCUIT INTEGRE GRILLE MESURE BORE NITRURE COUCHE PASSIVATION ELECTRONIQUE
- Keyword (en)
- PREPARATION DEPOSITION GROWTH FROM VAPOR CHEMICAL VAPOR DEPOSITION ELECTRIC RESISTIVITY INTEGRATED CIRCUIT GRATE MEASUREMENT BORON NITRIDES ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0216783
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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