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ELECTRICAL CONDUCTIVITY, DEFECT DENSITY AND STRUCTURE OF OBLIQUELY VACUUM-DEPOSITED TIN ANTIMONIDE ALLOY THIN FILMS

Author
DAMODARA DAS V; JAGADEESH MS
INDIAN INST. TECHNOL./MADRAS 600 036/IND
Source
J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 3; PP. 671-676; BIBL. 17 REF.
Document type
Article
Language
English
Keyword (fr)
COMPOSE MINERAL DEPOT SOUS VIDE DENSITE DEFAUT CRISTALLIN ANGLE INCIDENCE CONDUCTIVITE ELECTRIQUE ETUDE EXPERIMENTALE TRAITEMENT THERMIQUE DISTORSION RESEAU COUCHE MINCE CROISSANCE CRISTALLINE MICROSTRUCTURE ETAIN ANTIMONIURE SUPPORT VERRE CRISTALLOGRAPHIE
Keyword (en)
INORGANIC COMPOUND VACUUM DEPOSITION CRYSTAL DEFECT DENSITY ANGLE OF INCIDENCE ELECTRICAL CONDUCTIVITY EXPERIMENTAL STUDY HEAT TREATMENT LATTICE DISTORSION THIN FILM CRYSTAL GROWTH MICROSTRUCTURE TIN ANTIMONIDES CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0218563

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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