A NOVEL CAMEL DIODE GATE GAAS FET
- Author
- KOPP W; DRUMMOND TJ; WANG T; MORKOC H; SU SL
UNIV. ILLINOIS, DEP. ELECTR. ENG. COORDINATED SCI. LAB./URBANA IL 61801/USA - Source
- ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 86-88; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DIODE TRANSISTOR EFFET CHAMP GALLIUM ARSENIURE CARACTERISTIQUE COURANT TENSION PREPARATION DEPOT METHODE PHASE VAPEUR CONDENSATION FAISCEAU MOLECULAIRE DIODE CHAMEAU ELECTRONIQUE
- Keyword (en)
- DIODE FIELD EFFECT TRANSISTOR GALLIUM ARSENIDES VOLTAGE CURRENT CURVE PREPARATION DEPOSITION GROWTH FROM VAPOR MOLECULAR BEAM CONDENSATION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0232587
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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