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A NOVEL CAMEL DIODE GATE GAAS FET

Author
KOPP W; DRUMMOND TJ; WANG T; MORKOC H; SU SL
UNIV. ILLINOIS, DEP. ELECTR. ENG. COORDINATED SCI. LAB./URBANA IL 61801/USA
Source
ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 86-88; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE TRANSISTOR EFFET CHAMP GALLIUM ARSENIURE CARACTERISTIQUE COURANT TENSION PREPARATION DEPOT METHODE PHASE VAPEUR CONDENSATION FAISCEAU MOLECULAIRE DIODE CHAMEAU ELECTRONIQUE
Keyword (en)
DIODE FIELD EFFECT TRANSISTOR GALLIUM ARSENIDES VOLTAGE CURRENT CURVE PREPARATION DEPOSITION GROWTH FROM VAPOR MOLECULAR BEAM CONDENSATION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0232587

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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