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A SYSTEM FOR MEASURING DEEP-LEVEL SPATIAL CONCENTRATION DISTRIBUTIONS

Author
WANG KL
UNIV. CALIFORNIA, DEP. ELECTR. SCI. ENG./LOS ANGELES CA 90024/USA
Source
J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 449-453; BIBL. 22 REF.
Document type
Article
Language
English
Keyword (fr)
ETUDE EXPERIMENTALE DISTRIBUTION CONCENTRATION DIODE DIODE BARRIERE SCHOTTKY TRANSISTOR EFFET CHAMP TRANSISTOR MOS DISTRIBUTION IMPURETE SPECTROMETRIE TRANSITOIRE NIVEAU PROFOND NON METAL IMPLANTATION ION IMPURETE BORE IMPURETE SILICIUM IMPURETE HELIUM CRISTALLOGRAPHIE ELECTRONIQUE
Keyword (en)
EXPERIMENTAL STUDY CONCENTRATION DISTRIBUTION DIODE SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR MOS TRANSISTOR IMPURITY DISTRIBUTION DEEP LEVEL TRANSIENT SPECTROSCOPY NON METAL ION IMPLANTATION IMPURITY BORON CRISTALLOGRAPHY ELECTRONICS
Keyword (es)
CRISTALOGRAFIA ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0236249

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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