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COMPARISON OF SINGLE AND MULTIPLE PERIOD MODULATION DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR FETS

Author
DRUMMOND TJ; KEEVER M; MORKOC H
UNIV. ILLINOIS, DEP. ELECTR. ENG./URBANA IL 61801/USA
Source
JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L65-L67; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP HETEROJONCTION DOPAGE GRANDE VITESSE CARACTERISTIQUE COURANT TENSION GALLIUM ARSENIURE ALUMINIUM GALLIUM ARSENIURE MIXTE DOPAGE MODULATION ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR HETEROJUNCTION DOPING HIGH VELOCITY VOLTAGE CURRENT CURVE GALLIUM ARSENIDES ALUMINIUM GALLIUM ARSENIDES MIXED ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0242224

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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