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COMPOSITE TISI2/N+POLY-SI LOW-RESISTIVITY GATE ELECTRODE AND INTERCONNECT FOR VLSI DEVICE TECHNOLOGY

Author
WANG KL; HOLLOWAY TC; PINIZZOTTO RF; SOBCZAK ZP; HUNTER WR; TASCH A JR
TEXAS INSTRUMENTS INC./DALLAS TX 75265/USA
Source
IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 547-553; BIBL. 8 REF.
Document type
Article
Language
English
Keyword (fr)
FABRICATION MICROELECTRONIQUE TECHNOLOGIE CIRCUIT VLSI COUCHE MINCE TITANE SILICIURE SILICIUM POLYCRISTAL STRUCTURE MOS RESISTANCE CONTACT RESISTANCE ELECTRIQUE TRANSISTOR EFFET CHAMP TRANSISTOR MOS GRILLE MATERIAU COMPOSITE INTERCONNEXION SUPPORT SI ELECTRONIQUE
Keyword (en)
MICROELECTRONIC FABRICATION TECHNOLOGY VLSI CIRCUIT THIN FILM TITANIUM SILICIDES SILICON POLYCRYSTAL MOS STRUCTURE CONTACT RESISTANCE RESISTOR FIELD EFFECT TRANSISTOR MOS TRANSISTOR GRATE COMPOSITE MATERIAL ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL82X0250302

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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